Like the past few years, Samsung’s upcoming Galaxy S8 and Galaxy S8+ smartphones will be powered by the flagship Qualcomm Snapdragon chip in some markets, while others will be powered by the company’s in-house developed Exynos flagship. We have already seen the Qualcomm Snapdragon 835-powered Galaxy S8+ show up on Geekbench recently, posting pretty impressive benchmark scores. Today, the Exynos 9 8895-powered Galaxy S8+ has also showed up on Geekbench, with scores slightly better than the Snapdragon 835-powered variant.
The device is listed as the SM-G955F, which means it is the larger Galaxy S8+ and not the regular Galaxy S8. Just like the Snapdragon 835-powered variant, the Exynos 9 8895-powered Galaxy S8+ includes “only” 4GB of RAM, which is a little disappointing. On the software front, the prototype has been caught running on Android 7.0 Nougat operating system, although we are hoping that the Galaxy S8 and Galaxy S8+ will run on the newer Android 7.1.1 Nougat operating system at launch.
The Galaxy S8+ managed a single-core score of 1978 points and a multi-core score of 6375 points. For reference, the Snapdragon 835-powered Galaxy S8+ had scored 1929 points in the single-core test and 6084 points in the multi-core test. Samsung’s Exynos 8895 manages to leave Huawei’s Kirin 960 SoC behind as well, which proved to be the most powerful flagship SoC on an Android smartphone last year. Of course, this isn’t surprising at all, since newer SoCs are always expected to perform better than previous generation chips. However, the gap isn’t as wide as we would have expected, so you shouldn’t expect vastly improved performance from this year’s flagship handsets. It remains to be seen if the GPUs inside the Snapdragon 835 and Exynos 9 8895 chips will impress more, so we will have to wait patiently until Galaxy S8 and Galaxy S8+ are put through graphics benchmark tests. Both the Qualcomm Snapdragon 835 and Exynos 8895 are octa-core SoCs manufactured on a 10nm process node by Samsung.